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In this communication we present a NOT XOR gate using the cross-polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA). The gate utilizes only a SOA and it needs neither an inversion stage nor an additional synchronized clock. We demonstrate that the XPolM effect can rotate 73.5C the polarization-state of a CW beam when the power of a control beam changes from 0 to 300 (mu) W. The control and CW beams are introduced into the amplifier with a linear-polarization near to the unperturbed amplifier TM axis where the waveguide eigenmodes modification has a strong participation on the XPolM effect.
Horacio Soto,J. C. Dominguez,C. A. Diaz,Joseph Topomonzo,Didier Erasme,L. Schares, andGeorge Guekos
"Experimental demonstration of a NOT XOR gate using cross-polarization modulation in a semiconductor optical amplifier", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445707
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Horacio Soto, J. C. Dominguez, C. A. Diaz, Joseph Topomonzo, Didier Erasme, L. Schares, George Guekos, "Experimental demonstration of a NOT XOR gate using cross-polarization modulation in a semiconductor optical amplifier," Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445707