Paper
16 October 2001 Experimental demonstration of a NOT XOR gate using cross-polarization modulation in a semiconductor optical amplifier
Horacio Soto, J. C. Dominguez, C. A. Diaz, Joseph Topomonzo, Didier Erasme, L. Schares, George Guekos
Author Affiliations +
Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445707
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
In this communication we present a NOT XOR gate using the cross-polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA). The gate utilizes only a SOA and it needs neither an inversion stage nor an additional synchronized clock. We demonstrate that the XPolM effect can rotate 73.5C the polarization-state of a CW beam when the power of a control beam changes from 0 to 300 (mu) W. The control and CW beams are introduced into the amplifier with a linear-polarization near to the unperturbed amplifier TM axis where the waveguide eigenmodes modification has a strong participation on the XPolM effect.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Horacio Soto, J. C. Dominguez, C. A. Diaz, Joseph Topomonzo, Didier Erasme, L. Schares, and George Guekos "Experimental demonstration of a NOT XOR gate using cross-polarization modulation in a semiconductor optical amplifier", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445707
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Cited by 2 scholarly publications.
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