Effect Of Heating Rate End Annealing Temperature On Twin Formation In As[sup]+[/sup] Implanted (lll) Silicon

Yih-Cheng Shih; Jack Washburn; Steven C. Shatas

doi:10.1117/12.941354

31 May 1984 Effect Of Heating Rate End Annealing Temperature On Twin Formation In As⁺ Implanted (lll) Silicon

Yih-Cheng Shih, Jack Washburn, Steven C. Shatas

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941354
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The major secondary defect in post-annealed 5 x 10¹⁴/cm² As⁺ implanted (111) silicon is microtwins. This was shown to be true for rapid thermal annealing similar to conventional furnace annealing. However, the twin density after rapid thermal annealing to 1100°C for 10 seconds was found to be greater than that in a comparable specimen furnace annealed at 1000°C for 10 minutes. Sheet resistivity after annealing was found to be closely related to the twin density of the specimen. Thermal stress was shown not to be the cause of this increase in twin growth. The higher average crystal regrowth temperature appears to be responsible for growth of more large area twin. Twins of small size were shown to anneal out at high temperature but large area twins did not. Twin free specimens were obtained by regrowth of the amorphous layer at low temperature which formed only small area twins followed by a high temperature anneal which annihilated all the small twins.

Citation Download Citation

Yih-Cheng Shih, Jack Washburn, and Steven C. Shatas "Effect Of Heating Rate End Annealing Temperature On Twin Formation In As⁺ Implanted (lll) Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941354

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