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26 April 2002 Far-IR semiconductor laser for future THz-carrier free-space communications
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Proceedings Volume 4635, Free-Space Laser Communication Technologies XIV; (2002) https://doi.org/10.1117/12.464109
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States
Abstract
New experimental results are presented for the far-infrared p-Ge laser that enhance its prospects for application to secure satellite and short-range terrestrial free-space communications on a THz carrier. An optical means of gain modulation has been discovered that may potentially permit far-IR pulse generation via active mode-locking with low drive power. A compact high-field permanent-magnet assembly is demonstrated for applying the magnetic field required for laser operation without need of liquid helium. Compact light-weight laser-excitation electronics have been designed to run off a low voltage direct current supply.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert E. Peale, Andrei V. Muravjov, Eric W. Nelson, Chris J. Fredricksen, Sergei G. Pavlov, and Valery N. Shastin "Far-IR semiconductor laser for future THz-carrier free-space communications", Proc. SPIE 4635, Free-Space Laser Communication Technologies XIV, (26 April 2002); https://doi.org/10.1117/12.464109
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