Far-IR semiconductor laser for future THz-carrier free-space communications

Robert E. Peale; Andrei V. Muravjov; Eric W. Nelson; Chris J. Fredricksen; Sergei G. Pavlov; Valery N. Shastin

doi:10.1117/12.464109

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26 April 2002 Far-IR semiconductor laser for future THz-carrier free-space communications

Robert E. Peale, Andrei V. Muravjov, Eric W. Nelson, Chris J. Fredricksen, Sergei G. Pavlov, Valery N. Shastin

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Proceedings Volume 4635, Free-Space Laser Communication Technologies XIV; (2002) https://doi.org/10.1117/12.464109
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States

Abstract

New experimental results are presented for the far-infrared p-Ge laser that enhance its prospects for application to secure satellite and short-range terrestrial free-space communications on a THz carrier. An optical means of gain modulation has been discovered that may potentially permit far-IR pulse generation via active mode-locking with low drive power. A compact high-field permanent-magnet assembly is demonstrated for applying the magnetic field required for laser operation without need of liquid helium. Compact light-weight laser-excitation electronics have been designed to run off a low voltage direct current supply.

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Robert E. Peale, Andrei V. Muravjov, Eric W. Nelson, Chris J. Fredricksen, Sergei G. Pavlov, and Valery N. Shastin "Far-IR semiconductor laser for future THz-carrier free-space communications", Proc. SPIE 4635, Free-Space Laser Communication Technologies XIV, (26 April 2002); https://doi.org/10.1117/12.464109

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