Laser induced diffusible resistance: device characterization and process modeling

Michel Meunier; Maxime Cadotte; Mathieu Ducharme; Yves Gagnon; Alain Lacourse

doi:10.1117/12.470672

18 June 2002 Laser induced diffusible resistance: device characterization and process modeling

Michel Meunier, Maxime Cadotte, Mathieu Ducharme, Yves Gagnon, Alain Lacourse

Proceedings Volume 4637, Photon Processing in Microelectronics and Photonics; (2002) https://doi.org/10.1117/12.470672
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States

Abstract

Highly accurate resistances can be made by iteratively laser inducing diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. We show that the current-voltage characteristics of these new microdevices are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model is proposed involving the calculation of the laser melted region in which the dopant diffusion occurs. Experimental results are well described by the proposed model.

Citation Download Citation

Michel Meunier, Maxime Cadotte, Mathieu Ducharme, Yves Gagnon, and Alain Lacourse "Laser induced diffusible resistance: device characterization and process modeling", Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); https://doi.org/10.1117/12.470672

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