Onset of laser ablation in CaF2 crystal under excimer laser irradiation

Yoshizo Kawaguchi; Aiko Narazaki; Tadatake Sato; Hiroyuki Niino; Akira Yabe

doi:10.1117/12.470624

18 June 2002 Onset of laser ablation in CaF₂ crystal under excimer laser irradiation

Yoshizo Kawaguchi, Aiko Narazaki, Tadatake Sato, Hiroyuki Niino, Akira Yabe

Proceedings Volume 4637, Photon Processing in Microelectronics and Photonics; (2002) https://doi.org/10.1117/12.470624
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States

Abstract

With the widespread application of excimer lasers for micro- processing, optically transparent materials in the UV region have become more important as optical components. The transparent materials currently available commercially are silica glass and fluoride crystals, CaF₂ and MgF₂. The resistance of these materials against cumulative irradiation of excimer lasers is required from the viewpoint of application, and it is important to clarify the mechanisms of the optical damage on these materials. In this paper, we report the onset of laser ablation, that is, the initiation of optical breakdown and plume formation, in CaF₂ crystal under cumulative irradiation of an ArF excimer laser. When the laser fluence is below the ablation threshold, a blue luminescence due to self-trapped exciton is observed from the whole laser-irradiated region. When the fluence ins increased near the threshold, successive irradiation finally cause a bright, localized luminescence due to the initiation of laser ablation. SEM images of the laser-damaged region show two features: (1) a small bump with pits of the order of 0.1 micrometers formed by UV laser absorption and following local heating, (2) small cracks with triangular fragments caused by mechanisms stress under local heating.

Citation Download Citation

Yoshizo Kawaguchi, Aiko Narazaki, Tadatake Sato, Hiroyuki Niino, and Akira Yabe "Onset of laser ablation in CaF₂ crystal under excimer laser irradiation", Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); https://doi.org/10.1117/12.470624

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