Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices

Masayuki Okoshi; Masaaki Kuramatsu; Narumi Inoue

doi:10.1117/12.470651

18 June 2002 Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices

Masayuki Okoshi, Masaaki Kuramatsu, Narumi Inoue

Author Affiliations +

Proceedings Volume 4637, Photon Processing in Microelectronics and Photonics; (2002) https://doi.org/10.1117/12.470651
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States

Abstract

Silicon dioxide (SiO₂) thin films were deposited at room temperature by 193-nm ArF excimer laser ablation of silicone in oxygen atmosphere. Only the side chains of the target were photo-dissociated during ablation to deposit Si-O bonds on a substrate in high laser fluence at about 10 J/cm². Oxygen gas worked to oxidize the Si-O bonds ejected from the target to from SiO₂ thin films at the gas pressure of 4.4 X 10^-2 Torr, in addition to reducing the isolated carbon mixed into the films. We also found that the deposited rate could control refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. Thus, a 0.2-micrometers thick SiO₂ cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of a 100- micrometers -thick polyester film, and then a 0.6 micrometers -thick SiO₂ core film at 0.05 nm/pulse was fabricated in a line on the sample. The sample functioned as a waveguide device for a 633-nm line of He-Ne laser.

Citation Download Citation

Masayuki Okoshi, Masaaki Kuramatsu, and Narumi Inoue "Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices", Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); https://doi.org/10.1117/12.470651

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