First observation of the short-pulsing Q-switching mode in a double-heterostructure laser diode without ion implantation

Sergey N. Vainshtein; Mikhail I. Sverdlov; Larisa Shestak; Vladimir Tretyakov; Juha Tapio Kostamovaara

doi:10.1117/12.470425

11 June 2002 First observation of the short-pulsing Q-switching mode in a double-heterostructure laser diode without ion implantation

Sergey N. Vainshtein, Mikhail I. Sverdlov, Larisa Shestak, Vladimir Tretyakov, Juha Tapio Kostamovaara

Author Affiliations +

Proceedings Volume 4643, Ultrafast Phenomena in Semiconductors VI; (2002) https://doi.org/10.1117/12.470425
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

A double heterostructure (DH) laser has been developed and tested with the aim of achieving high-power picosecond optical pulses in the near-infrared range for use in advanced laser radars and other applications. The physical idea consists of achieving fast gain control by means of temporal evolution of the electric field in the active region. The gain is controlled by the variation in current due to transformation in the built-in electric field across the active region, provided that a high current density is used for pumping. This transformation broadens the carrier energy distribution in the active region, thus suppressing lasing until the current pulse stops. The resulting carrier accumulation causes an enlargement in the power of the short-pulsing Q-switching mode. One of the most important features of the laser structure is the placement of the electron injector well outside the two hetero-barriers forming the active region. Three transient lasing modes were observed simultaneously in this laser diode, with a maximum difference in wavelength as large as 60 nm. One of them, a 45 W/ 25 ps Q-switching mode which appears near the trailing edge of the current pulse, being spectrally separated from the other two. A significant further increase in the power of the Q-switching mode can be expected from an optimized laser structure with two parasitic modes completely suppressed. The new laser structure produces much more powerful picosecond pulses than are obtainable from gain-switched lasers and allows lasing wavelength control by means of bandgap engineering.

Citation Download Citation

Sergey N. Vainshtein, Mikhail I. Sverdlov, Larisa Shestak, Vladimir Tretyakov, and Juha Tapio Kostamovaara "First observation of the short-pulsing Q-switching mode in a double-heterostructure laser diode without ion implantation", Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); https://doi.org/10.1117/12.470425

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Q switches

Semiconductor lasers

Picosecond phenomena

Diodes

Photons

Gallium arsenide

Heterojunctions

Show All Keywords

Keywords/Phrases

Search In:

Publication Years