Application of optical near-field microscopy for the investigation of semiconductor nanostructure properties

A. B. Evlyukhin

doi:10.1117/12.464187

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30 April 2002 Application of optical near-field microscopy for the investigation of semiconductor nanostructure properties

A. B. Evlyukhin

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Proceedings Volume 4644, Seventh International Conference on Laser and Laser-Information Technologies; (2002) https://doi.org/10.1117/12.464187
Event: Seventh International Conference on Laser and Laser Information Technologies, 2001, Vladimir, Suzdal, Russian Federation

Abstract

The near field response of semiconductor nanostructure is theoretically investigated for the collection mode of scanning near-field optical microscope (SNOM). We calculated the near-field distribution on the observation plane for several physical systems, in which the semiconductor nanostructure is approximated by the right-angled object with dielectric function including the contributions from the lattice and the free charge carriers. Our calculations take into account the nanoscale objects presence on and under the surface with electromagnetic evanescent waves which are induced by plane excitation light under condition of total reflection wave in SNOM. All calculations are carried out by using self-consistent integral equation formalism. This treatment is based on the field- susceptibility Green's function technique applied in real space. As a result we show that the near-field distribution is essentially dependent on the quantity of charge carriers and on its kinetic properties and also on the configuration of the system.

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A. B. Evlyukhin "Application of optical near-field microscopy for the investigation of semiconductor nanostructure properties", Proc. SPIE 4644, Seventh International Conference on Laser and Laser-Information Technologies, (30 April 2002); https://doi.org/10.1117/12.464187

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