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5 April 2002 Modeling of Er3+-doped SiO2-TiO2 planar amplifier
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Proceedings Volume 4645, Rare-Earth-Doped Materials and Devices VI; (2002) https://doi.org/10.1117/12.461654
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
The feasibility of high gain planar waveguide amplifiers, made by Er-doped, silica-titania SiO$02) - TiO2 thin films on silica SiO2 glass substrate, is proved by means of an on purpose developed computer code. The computer code implemented for simulation is based on a complete model, which takes into account the secondary transitions pertaining to the ion-ion interactions, the pump and signal propagation, and the ASE. In the small signal operation, a gain close to 4.7 dB is theoretically demonstrated for a waveguide of 5 cm length, by using a pump power of 200 mW. A first set of waveguiding samples is fabricated and characterized.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francesco Prudenzano, Antonella D'Orazio, Marco De Sario, Luciano Mescia, Vincenzo Petruzzelli, Alessandro Chiasera, Maurizio Montagna, Cristiana Tosello, and Maurizio Ferrari "Modeling of Er3+-doped SiO2-TiO2 planar amplifier", Proc. SPIE 4645, Rare-Earth-Doped Materials and Devices VI, (5 April 2002); https://doi.org/10.1117/12.461654
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