Analysis temperature characteristics of highly strained InGaAs-GaAsP-GaAs (I>1.17 mm) quantum well lasers

Nelson Tansu; Luke J. Mawst

doi:10.1117/12.470529

12 June 2002 Analysis temperature characteristics of highly strained InGaAs-GaAsP-GaAs (λ1.17μm) quantum well lasers

Nelson Tansu, Luke J. Mawst

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470529
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Characteristic temperature coefficients of the threshold current (T₀) and the external quantum efficiency (T₁), on highly-strained In_0.35Ga_0.65As- ((lambda) =1.17micrometers ) and In_0.4Ga_0.6As- ((lambda) =1.19micrometers ) QW lasers, are studied as simple functions of the temperature dependent of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current (T₀) and the external differential quantum efficiency (T₁) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold (J_th) and transparency (J_tr) current density, the carrier injection efficiency (N_inj) and external (N_d) differential quantum efficiency, the internal loss ((alpha) _i), and the material gain parameter (G₀). Simple expressions for T₀ and T₁ are derived in terms of the fundamental device parameters, indicating that the observed cavity length dependence is due to the length dependence of the modal threshold gain. The influence of monomolecular, radiative, and Auger recombination on the characteristic temperature of the transparency current density, T_tr, are analyzed. A measurement of T_tr, then allows one to determine the dominant recombination mechanisms in the QW. The characteristic temperature of the internal loss, T_(alpha i), can be used to determine the influence of intervalence band absorption on the value of T₀. The analysis done on the InGaAs QW lasers show that the simple expressions for T₀ and T₁ values gives consistent results between experiments and theory.

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Nelson Tansu and Luke J. Mawst "Analysis temperature characteristics of highly strained InGaAs-GaAsP-GaAs (λ1.17μm) quantum well lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470529

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KEYWORDS

Quantum wells

Transparency

Quantum efficiency

Temperature metrology

Semiconductor lasers

External quantum efficiency

Internal quantum efficiency

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