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12 June 2002 GaN-based tunnel junction in optical devices
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We have demonstrated hole injection through a tunnel junction embedded in the GaN-based light emitting diode structure. The tunnel junction consists of 30 nm GaN:Si++ and 15 nm InGaN:Mg++ grown on a GaN-InGaN quantum well heterostructure. The forward voltage of the light emitting diode, included the voltage drop across the reverse-biased tunnel junction, is 4.1 V at 50 Z/cm$_2), while that of a standard light emitting diode with a conventional contact structure is 3.5 V. The light output of the diode with the tunnel junction is comparable to that of the standard device. We then employed the tunnel junction in vertical cavity surface emitting laser structures and dual-wavelength light emitters. In the vertical cavity structure, a good lateral current spreading was accomplished, resulting in uniform emission pattern. The dual-wavelength light emitter has been operated as a three- terminal device with independent electrical control of each LEDs to a nsec time scale.
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