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12 June 2002 Gain and photoluminescence in semiconductor lasers
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Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the calculation of optical properties is coupled to a drift diffusion model for the mesoscopic charge and electric field distributions to calculate photo-luminescence and gain spectra in barrier-doped semiconductor laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is demonstrated that the electric fields arising from the space charges of ionized dopants contribute to strongly excitation dependent optical properties, such as significant shifts of the luminescence versus peak gain wavelengths.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joerg Hader, Stephan W. Koch, Aramais R. Zakharian, Jerome V. Moloney, James E. Ehret, and Thomas R. Nelson Jr. "Gain and photoluminescence in semiconductor lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002);

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