Multi-quantum-ell electroabsorption modulators

Joachim Piprek; Yijen Chiu; John Edward Bowers

doi:10.1117/12.470567

12 June 2002 Multi-quantum-well electroabsorption modulators

Joachim Piprek, Yijen Chiu, John Edward Bowers

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470567
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Electroabsorption modulators (EAMs) based on the quantum confined Stark effect have advantages in applications that require high speed, low drive voltage, and high extinction ratio. They are promising devices for external signal modulation in high-bandwidth optical communication systems. EAMs can be integrated with other devices like laser diodes, semiconductor optical amplifiers, and mode transformers. We have previously fabricated InGaAsP/InP multi-quantum well EAMs with a bandwidth of 25 GHz and a drive voltage of 1.2 V and 20 dB extinction ratio. Further optimization of our devices requires a detailed analysis of internal physical processes and their interaction. In this paper, we employ a two-dimensional electro-optic device model to analyze our EAMs. The model self-consistently combines kp bandstructure and absorption calculations with a carrier drift-diffusion model and optical waveguiding. The required low polarization sensitivity of EAMs leads to strong valence band mixing so that usual effective mass models cannot be applied. Optical transmission characteristics are calculated which are in good agreement with measurements. Modulation efficiency and linearity are analyzed in detail. Optimum operation voltages are identified.

Citation Download Citation

Joachim Piprek, Yijen Chiu, and John Edward Bowers "Multi-quantum-well electroabsorption modulators", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470567

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