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16 April 2002 Mapping of current and heat flows in IR light-emitting devices and lasers
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Proceedings Volume 4648, Test and Measurement Applications of Optoelectronic Devices; (2002) https://doi.org/10.1117/12.462658
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
High spatial resolution infrared (3-5 and 8-12 micrometers ) scanning microscopy study shows that light and heat signatures of conventional planar light emitting diodes for 3-5 micrometers spectral range. (InGaAs, InAs, InAsSb) are drastically affected by current crowding effect. As a result, Joule heating causes unavoidable heat traps in the vicinity of point contact (those are most pronounced in substrate down structures), whereas large uniform emitting areas are difficult to produce. Contrary to this, emitters based on magnetoconcentration effect (InSb) are free of current crowding and could be made of larger areas (of some mm2). For the diode stripe (width of 100 micrometers ) lasers (AlGaAs/GaAs, InGaAsP) we show that heat concentrates at lateral stripe sides that are difficult to penetrate. Some details of an infrared micromapping system characterized by 20 micrometers spatial resolution and 10 microsecond(s) time resolved interval are also given.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Volodymyr K. Malyutenko "Mapping of current and heat flows in IR light-emitting devices and lasers", Proc. SPIE 4648, Test and Measurement Applications of Optoelectronic Devices, (16 April 2002); https://doi.org/10.1117/12.462658
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