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4 June 2002 Large aperture 850nm oxide-confined VCSELs for 10Gb/s data communication
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Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
As the bit rates of high-speed data transmission increase, the dynamic properties of the VCSEL are becoming more important. High photon density is of great importance for high modulation efficiency and low noise. We will present a schematic of the Zarlink 850nm 10Gb/s selectively oxidized VCSEL design and results from small and large signal modulation. The modulation characteristics were improved by utilizing InGaAs quantum wells, which have better gain characteristics than GaAs wells. 10Gb/s transmission over 300m of OFS-Fitel LaserWavetm 300 Fiber for a 12micrometers aperture multimode VCSEL at 80 degree(s)C will be demonstrated. Bit error rate (BER) measurement with the corresponding power penalty will also be presented.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Aggerstam, Rickard M. von Wurtemberg, Christine Runnstrom, and Emmanuil Choumas "Large aperture 850nm oxide-confined VCSELs for 10Gb/s data communication", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002);

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