Temperature characteristics of 1.16 um highly strained GaInAs/GaAs VCSELs

Takashi Kondo; Masakazu Arai; Nobuhiko Nishiyama; Munechika Azuchi; Akihiro Matsutani; Tomoyuki Miyamoto; Fumio Koyama; Kenichi Iga

doi:10.1117/12.469248

4 June 2002 Temperature characteristics of 1.16 μm highly strained GaInAs/GaAs VCSELs

Takashi Kondo, Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Author Affiliations +

Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469248
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We demonstrated highly strained GaInAs/GaAs QW VCSELs emitting at 1.16 micrometers . The fabricated device shows the record low threshold current density and high efficiency in 1.1-1.2 micrometers wavelength range. The VCSEL structure was monolithically grown on a (100) n-type GaAs substrate by a low-pressure metalorganic vapor phase epitaxy (MOVPE). The active region consists of triple 8 nm thick Ga_0.64In_0.36As TQWs separated by 25 nm GaAs barrier layers. The compressive strain of QWs is 2.3%. The threshold current is 3 mA for a 10micrometers ~10micrometers oxide device, corresponding to a threshold current density of 3 kA/cm². We achieved the maximum output power of over 2 mW and a slope efficiency of 0.3 W/A at 25 degree(s)C, which are the record data for 1.2 micrometers band GaInAs VCSELs. The maximum CW operating temperature is 85 degree(s)C. The threshold current is almost constant in the temperature range of 20-70 degree(s)C which results from appropriate wavelength matching between gain peak and lasing mode. The temperature dependence of the lasing wavelength is 0.07 nm/K. We present the details of temperature characteristics of the fabricated VCSEL and discuss a possibility of uncooled GaInAs/GaAs VCSELs for high speed LANs.

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Takashi Kondo, Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, and Kenichi Iga "Temperature characteristics of 1.16 μm highly strained GaInAs/GaAs VCSELs", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); https://doi.org/10.1117/12.469248

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