Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy

Wei Li; Markus Pessa; Tommy Ahlgren; James Dekker

doi:10.1117/12.467665

21 May 2002 Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy

Wei Li, Markus Pessa, Tommy Ahlgren, James Dekker

Author Affiliations +

Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467665
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Positron-annihilation measurements and nuclear reaction analysis (utilizing the ¹⁴N(d, p)¹⁵N and ¹⁴N(d, a)¹²C reactions) in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials grown by molecular beam epitaxy (MBE) using a radio-frequency (rf) plasma nitrogen source. Our data unambiguously show the existence of vacancy-type defects, which we attribute to Ga vacancies, and nitrogen interstitials in the as-grown Nitride-Arsenide epilayers. These point defects, we believe, are responsible for the low luminescence efficiency of as-grown Ga(In)NAs materials and the enhanced diffusion process during annealing.

Citation Download Citation

Wei Li, Markus Pessa, Tommy Ahlgren, and James Dekker "Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467665

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