Surface leakage current in HgCdTe photodiodes

Jakub Wenus; Jaroslaw Rutkowski; Antoni Rogalski

doi:10.1117/12.467671

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21 May 2002 Surface leakage current in HgCdTe photodiodes

Jakub Wenus, Jaroslaw Rutkowski, Antoni Rogalski

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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467671
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

This study describes fabrication of heterojunction HgCdTe photodiodes passivated with a wide band-gap CdTe epitaxial layer. The current-voltage characteristics of these photodiodes with and without passivation have been investigated. It is shown that for reverse bias the measured I-V characteristics can be explained by a surface tunneling current and surface generation current. The breakdown voltage is observed to decrease monotonically with increasing temperature, a trend that is directly opposite to what would be expected from a pure tunneling mechanism. Additional information on surface limitations is obtained from analyzing the R₀A product as a function of temperature. The performance of both type of p-n VLWIR HgCdTe photodiodes (with and without the passivating layer) have been compared.

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Jakub Wenus, Jaroslaw Rutkowski, and Antoni Rogalski "Surface leakage current in HgCdTe photodiodes", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467671

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