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21 May 2002 Surface leakage current in HgCdTe photodiodes
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467671
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
This study describes fabrication of heterojunction HgCdTe photodiodes passivated with a wide band-gap CdTe epitaxial layer. The current-voltage characteristics of these photodiodes with and without passivation have been investigated. It is shown that for reverse bias the measured I-V characteristics can be explained by a surface tunneling current and surface generation current. The breakdown voltage is observed to decrease monotonically with increasing temperature, a trend that is directly opposite to what would be expected from a pure tunneling mechanism. Additional information on surface limitations is obtained from analyzing the R0A product as a function of temperature. The performance of both type of p-n VLWIR HgCdTe photodiodes (with and without the passivating layer) have been compared.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jakub Wenus, Jaroslaw Rutkowski, and Antoni Rogalski "Surface leakage current in HgCdTe photodiodes", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467671
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