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22 May 2002 100-mW high-power three-section tunable distributed Bragg reflector laser diodes with a real refractive-index-guided self-aligned structure
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467965
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
High-power (>100mW) 820 nm-band distributed Bragg reflector (DBR) laser diodes (LDs) with stable fundamental transverse mode operation and continuous wavelength tuning characteristics have been developed. To obtain high-power LDs with a stable fundamental transverse mode in 820 nm wavelength range, an AlGaAs narrow stripe (2.0 micrometers ) real refractive-index-guided self-aligned (RISA) structure is utilized. In the RISA structure, the index step between inside and outside the stripe region ((Delta) n) can be precisely controlled in the order of 10-3). To maintain a stable fundamental transverse mode up to an output power over 100 mW, (Delta) n is designed to be 4x10-3. Higher-order transverse modes are effectively suppressed by a narrow stripe geometry. Further, to achieve continuous wavelength tuning capability, the three-section LD structure, which consists of the active (700micrometers ), phase control (300micrometers ), and DBR(500micrometers ) sections, is incorporated. Our DBR LDs show a maximum output power over 200mW with a stable fundamental transverse mode, and wavelength tuning characteristics ((Delta) (lambda) ~2nm) under 100 mW CW operation.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Takayama, Atsunori Mochida, Kenji Orita, Satoshi Tamura, Toshikazu Ohnishi, Masaaki Yuri, and Hirokazu Shimizu "100-mW high-power three-section tunable distributed Bragg reflector laser diodes with a real refractive-index-guided self-aligned structure", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467965
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