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22 May 2002 980-nm quantum dot lasers for high-power applications
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
980 nm GaInAs/(Al)GaAs quantum dot laser structures with a high internal quantum efficiency ni of about 90%, and a low internal absorption <2.5 cm-1 and a threshold current densities as low as 140 A/cm2 have been fabricated. Laser diodes that show output powers of up to 4W from a single facet of a 100micrometers broad laser diode after AR/HR coating at 10 degree(s)C have been processed. The highest total output power for lasers with cleaved facets was obtained with a 200micrometers broad laser diode. This laser shows a maximum output power of 5W. Through the use of short period superlattices in the inner waveguide region we could significantly improve the high temperature properties compared to earlier devices. The lasers have characteristic temperatures T0 of above 100 K up to an operation temperature of 110 degree(s)C. As a result our lasers show output powers as high as 1 W even at temperatures as high as 100 degree(s)C. In addition to quite competitive laser properties the rather broad gain profile of a quantum dot ensemble allows the fabrication of laser diodes with a reduced temperature-induced wavelength shift. Understanding the underlying effects and optimizing the cavity design, quantum dot lasers with wavelength shifts of 0.16 nm/K have been realized which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Klopf, Stefan Deubert, Johann-Peter Reithmaier, Alfred W. B. Forchel, Philippe Collot, and Michel M. Krakowski "980-nm quantum dot lasers for high-power applications", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002);

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