High-efficiency multiple-quantum-well GaInNAs/GaNAs ridge-waveguide diode lasers

Wonill Ha; Vincent Gambin; Mark A. Wistey; Seth Bank; Seongsin M. Kim; James S. Harris Jr.

doi:10.1117/12.467964

22 May 2002 High-efficiency multiple-quantum-well GaInNAs/GaNAs ridge-waveguide diode lasers

Wonill Ha, Vincent Gambin, Mark A. Wistey, Seth Bank, Seongsin M. Kim, James S. Harris Jr.

Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467964
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We present a new structure with nitrogen incorporation in barrier and new material with antimony for developing post-annealed long wavelength material. This new structure and new material result in a shift of the post-annealed luminescence out to 1.6 um. The new structure, nitrogen in barrier, reduces the blue-shift of the emission spectrum by suppressing nitrogen out-diffusion from the quantum wells (QWs) and decreasing carrier confinement between barriers and QWs. GaNAs or GaNAsSb barriers can also reduce the overall strain of the active region because the high indium mole fraction QWs are compressively strained and the barriers with nitrogen are tensely strained. By adding small amount of antimony, we were able to incorporate up to 46% indium. We will present results of high efficiency long wavelength multiple QW GaInNAs ridge-waveguide laser diodes using GaNAs barriers. We will also show GaInNAsSb QWs with GaNAsSb barriers ridge waveguide laser emitting at 1.465 um. We have observed photoluminescence up to 1.6 um with different indium and antimony concentrations. Our GaInNAs and GaInNAsSb ridge waveguide laser diodes have broad emission spectra covering 1.27 um to 1.465 um with pulsed operation up to 90 degree(s)C. The maximum output power at room temperature, under pulsed operation was 350 mW with a differential efficiency of 0.67 W/A.

Citation Download Citation

Wonill Ha, Vincent Gambin, Mark A. Wistey, Seth Bank, Seongsin M. Kim, and James S. Harris Jr. "High-efficiency multiple-quantum-well GaInNAs/GaNAs ridge-waveguide diode lasers", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467964

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available