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22 May 2002 High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We report on the growth of GaInNAs materials and lasers by molecular beam epitaxy (MBE) using a rf-plasma source. Optimal GaInNAs quantum well (QW) structures have been designed and grown in order to achieve the brightest and narrowest photoluminescence (PL) spectra beyond 1.30 um. State-of-the-art GaInNAs/GaAs SQW lasers operating at 1.32 um have been demonstrated. For a broad area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 um, the threshold current density is 546 A/cm2 at room temperature. Optical output up to 40 mW per facet under continuous wave operation was achieved for these uncoated lasers at room temperature.
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Wei Li, Chang Si Peng, Tomi Jouhti, Janne Konttinen, Emil-Mihai Pavelescu, Mikko Suominen, Mihail M. Dumitrescu, and Markus Pessa "High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002);

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