Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation

Sergey N. Nesmelov; Aleksander V. Voitsekhovskii; Aleksander G. Korotaev; Andrej P. Kokhanenko

doi:10.1117/12.463849

27 March 2002 Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation

Sergey N. Nesmelov, Aleksander V. Voitsekhovskii, Aleksander G. Korotaev, Andrej P. Kokhanenko

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Proceedings Volume 4654, Silicon-based and Hybrid Optoelectronics IV; (2002) https://doi.org/10.1117/12.463849
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The development of Schottky barrier technology for creation of IR-photodetectors is caused by reduction of a potential barrier height used by formation of heavily-doped thin layer near to the semiconductor surface. We propose for this aim to form heavily-doped nanolayer in p-Si by recoil implantation of boron. Boron nm-thick film was deposited on the Si sample surfaces by cathode sputtering. After that the samples were irradiated by high intensity Al⁺ beams extracted from pregenerated explosion-emission plasma. The samples are examined by secondary ion mass-spectrometry (SIMS). It is experimental established that profile of impurity distribution in surface layer is exponential. The doping concentration at the silicide/silicon interface is 10¹⁸-10²⁰ cm^-3 and thickness of surface layer is 8 - 12 nm. The energy band diagrams of a PtSi - p- Si Schottky barrier with high-doped surface layer formed by recoil implantation were calculated for different parameters of barrier. It is shown, that effective barrier heights in PtSi-Si with recoil implantation formed surface 10 nm layer at surface concentration order 10²⁰ cm^-3 is reduced to 0.13 eV, corresponding to a cutoff wavelength of 9.5 micrometers . Thus, the cutoff wavelength of the PtSi Schottky infrared detectors has been extended to the long wavelength infrared region by incorporating a p⁺ doping layer with exponential profile of impurity distribution at the silicide/silicon interface.

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Sergey N. Nesmelov, Aleksander V. Voitsekhovskii, Aleksander G. Korotaev, and Andrej P. Kokhanenko "Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation", Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); https://doi.org/10.1117/12.463849

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KEYWORDS

Silicon

Ions

Boron

Semiconductors

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Metals

Doping

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