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27 March 2002 Fabrication and evaluation of SiC optical modulators
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Proceedings Volume 4654, Silicon-based and Hybrid Optoelectronics IV; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Silicon Carbide is a potentially useful compound for use in silicon based photonics because cubic silicon carbide (3C- SiC), possesses a first order electro-optic (Pockels) effect, something absent in pure silicon. This means the material is potentially suitable for high speed optical modulation. Furthermore, the wide bandgap (2.2 eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths, and also means the material can tolerate high temperatures. However, relatively little work has been carried out in SiC for photonics applications. In this paper we will discuss design and fabrication of both SiC waveguides and modulators for silicon based photonics. The fabrication process utilizes ion implantation of oxygen into SiC to form the lower waveguide boundary. Subsequently, ribs are etched and contacts are added to form the optical modulators. Consideration of both Pockels modulators and plasma dispersion modulators has been made, and both will be discussed here. These devices have potential for optical modulation, but are also compatible with silicon processing technology. We have demonstrated waveguiding in 3C-SiC, established a processing recipe for the SiC wafers which enables fabrication of 3-dimensional devices, and demonstrated optical modulation. Performance of the resultant devices is compared to other silicon based devices in terms of operating speed and efficiency.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Graham T. Reed, Ching Eng Png, Goran Masanovic, S. Chan, S. T. Lim, Adrian P. Vonsovici, Alan G. R. Evans, Ragheid M.H. Atta, Stacey M. Jackson, A. S. Way, and Adrian K. Kewell "Fabrication and evaluation of SiC optical modulators", Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002);


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