Silicon Carbide is a potentially useful compound for use in silicon based photonics because cubic silicon carbide (3C- SiC), possesses a first order electro-optic (Pockels) effect, something absent in pure silicon. This means the material is potentially suitable for high speed optical modulation. Furthermore, the wide bandgap (2.2 eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths, and also means the material can tolerate high temperatures. However, relatively little work has been carried out in SiC for photonics applications. In this paper we will discuss design and fabrication of both SiC waveguides and modulators for silicon based photonics. The fabrication process utilizes ion implantation of oxygen into SiC to form the lower waveguide boundary. Subsequently, ribs are etched and contacts are added to form the optical modulators. Consideration of both Pockels modulators and plasma dispersion modulators has been made, and both will be discussed here. These devices have potential for optical modulation, but are also compatible with silicon processing technology. We have demonstrated waveguiding in 3C-SiC, established a processing recipe for the SiC wafers which enables fabrication of 3-dimensional devices, and demonstrated optical modulation. Performance of the resultant devices is compared to other silicon based devices in terms of operating speed and efficiency.