Translator Disclaimer
Paper
1 July 2002 Effect of argon and non-argon ion impingement on the stress reduction of multilayers for extreme-ultraviolet lithography
Author Affiliations +
Abstract
We investigated the effects of oxygen and nitrogen atoms on stress reduction in low-stress multilayers developed by us. It was considered that the presence of non-argon atoms in molyndenum layers caused the stress change in the multilayers, because in the ion-beam polishing (IBP) of low-stress multilayers, we found that air was mixed with the argon gas for IBP with an assisting ion source. We analyzed the composition of the low-stress multilayer with oxygen- and nitrogen-mixed gas in the depth direction and detected oxygen and nitrogen atoms near the surface of the molybdenum layers. We also used an in situ stress monitoring system developed by us and investigated the contribution to stress reduction of each process with/without oxygen and nitrogen. We found that there were thresholds for both oxygen gas flow rate and thickness oxygen-doped molybdenum layers (i.e., molybdenum oxide layers) to suppress the compressive stress change in silicon layers. It was considered that the molybdenum oxide layers functioned as barrier layers to impede the formation of the interdiffusion layers causing strain, resulting in the suppression of the compressive stress change in subsequent silicon layers.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayuki Shiraishi, Wakana Ishiyama, Noriaki Kandaka, Tetsuya Oshino, and Katsuhiko Murakami "Effect of argon and non-argon ion impingement on the stress reduction of multilayers for extreme-ultraviolet lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472329
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
Back to Top