Three-dimensional metrology in MEMS applications

Alexander Friz; Keith Frank Best; Satinderpall Pannu; Jocelyn T. Nee

doi:10.1117/12.472299

1 July 2002 Three-dimensional metrology in MEMS applications

Alexander Friz, Keith Frank Best, Satinderpall Pannu, Jocelyn T. Nee

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472299
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

ASML-Special Applications has shown its ability to align and quantify overlay in thick films to address alignment and metrology challenges in the Micro-Electromechanical Systems (MEMS) field. These methods apply to any thick film material layers > 5 micrometers . In these thick film scenarios, the issue that arises is the overlay quantification between the upper layer lithography and the bottom layer lithography. In this situation, one quickly approaches the limit of box-in-box metrology. ASML's ability to align to deeply recessed marks overcomes this problem. In addition, the use of ASML's two-point global alignment scheme simplifies wafer processing to reveal covered marks on the bottom surface for further alignment as compared to multiple points in EGA-style alignment systems. The capability to not only align but also to quantify overlay over such a large 'Z' range is an ability that can help to empower the MEMS industry to design and manufacture products that were previously not possible. We address MEMS metrology issues by using the on-board metrology system of an ASML stepper.

Citation Download Citation

Alexander Friz, Keith Frank Best, Satinderpall Pannu, and Jocelyn T. Nee "Three-dimensional metrology in MEMS applications", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472299

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