Vendor capability for low-thermal-expansion mask substrates for EUV lithography

Kenneth L. Blaedel; John S. Taylor; Scott Daniel Hector; Pei-yang Yan; Arun Ramamoorthy; Peter D. Brooker

doi:10.1117/12.472273

1 July 2002 Vendor capability for low-thermal-expansion mask substrates for EUV lithography

Kenneth L. Blaedel, John S. Taylor, Scott Daniel Hector, Pei-yang Yan, Arun Ramamoorthy, Peter D. Brooker

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472273
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Development of manufacturing infrastructure is required to ensure a commercial source of mask substrates for the timely introduction of EUVL. Improvements to the low thermal expansion materials that compose the substrate have been made, but need to be scaled to production quantities. We have been evaluating three challenging substrate characteristics to determine the state of the infrastructure for the finishing of substrates. First, surface roughness is on track and little risk is associated with achieving the roughness requirement as an independent specification. Second, with new flatness-measuring equipment just coming on line, the vendors are poised for improvement toward the SEMI P37 flatness specification. Third, significant acceleration is needed in the reduction of defect levels on substrates. The lack of high-sensitivity defect metrology at the vendors' sites is limiting progress in developing substrates for EUVL.

Citation Download Citation

Kenneth L. Blaedel, John S. Taylor, Scott Daniel Hector, Pei-yang Yan, Arun Ramamoorthy, and Peter D. Brooker "Vendor capability for low-thermal-expansion mask substrates for EUV lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472273

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