Dynamic in-situ temperature profile monitoring of a deep-UV post-exposure-bake process

Barney M. Cohen; Wayne G. Renken; Paul Miller

doi:10.1117/12.473441

16 July 2002 Dynamic in-situ temperature profile monitoring of a deep-UV post-exposure bake process

Barney M. Cohen, Wayne G. Renken, Paul Miller

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473441
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

A system for monitoring the dynamic temperature profile during the deep UV (DUV) post exposure bake (PEB) is described. Platinum resistor temperature detectors (RTDs) are embedded into silicon wafers. Hardware and software convert the resistances to temperatures. The RTD calibration is National Institute of Standards and Technology (NIST) traceable. The wafers are tested on both a thermally uniform hot plate and a production PEB chamber. The temperature profiles for the PEB are fitted to a heat transfer model allowing heating and cooling time constants to be determined. High accuracy and precision are demonstrated.

Citation Download Citation

Barney M. Cohen, Wayne G. Renken, and Paul Miller "Dynamic in-situ temperature profile monitoring of a deep-UV post-exposure bake process", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473441

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