Paper
16 July 2002 Low-voltage CD-SEM applications in MEMS devices
Susan Redmond, Roger McKay, Mary Mellard, Catherine Norris, Jerry Wonnacott, Martin E. Mastovich
Author Affiliations +
Abstract
The emergence of Micro Electro Mechanical Systems (MEMS) in production volumes has led to the need for stringent metrology. Quality control issues prompted examination of devices via analytical scanning electron microscopes (SEM); however, residues left on the resistor structures were not visible at high voltage. Thus the processes involved in the production of these devices has limited the usefulness of the traditional high voltage SEM in the measurement of critical dimensions. This paper presents the images acquired below 550 electron volts (eV) landing energy and the associated data on such inkjet devices. This capability has proven to be extremely useful both in terms of process control with metrology, and in terms of failure analysis.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susan Redmond, Roger McKay, Mary Mellard, Catherine Norris, Jerry Wonnacott, and Martin E. Mastovich "Low-voltage CD-SEM applications in MEMS devices", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473501
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KEYWORDS
Resistors

Scanning electron microscopy

Oxides

Semiconducting wafers

Aluminum

Etching

Metals

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