New approach for mapping and monitoring damascene trench depth using CD-SEM tilt imaging

Ram Peltinov; Anthony Pan; Ophir Dror

doi:10.1117/12.473437

16 July 2002 New approach for mapping and monitoring damascene trench depth using CD-SEM tilt imaging

Ram Peltinov, Anthony Pan, Ophir Dror

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473437
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Due to miniaturization of semiconductor devices, ArF (193nm) lithography is likely expected to be used for sub 100nm regime. For sub 100nm devices, high NA exposure tools and various strong off-axis illumination (OAI) conditions should be used. But unlike KrF (248nm) lithography, resist pattern collapse becomes one of the most serious problems in ArF lithography. In order to solve pattern collapse problem, thin resist process is generally introduced but its poor etch resistance is an obstacle for being applied in real production process. Due to this reason, new kinds of organic BARC materials are investigated and optimized to avoid pattern collapse. As mentioned, the most important issue in ArF organic BARC is believed to be the pattern collapse problem. A number of organic BARCs were made by varying polymer, cross-linker, thermal acid generator, and additive. We tried to analyze the key factor in terms of pattern collapse. This paper is to compare the various elements of the organic BARC formulation and to discuss what brings and causes pattern collapse.

Citation Download Citation

Ram Peltinov, Anthony Pan, and Ophir Dror "New approach for mapping and monitoring damascene trench depth using CD-SEM tilt imaging", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473437

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