Optimum sampling for characterization of systematic variation in photolithography

Jason P. Cain; Haolin Zhang; Costas J. Spanos

doi:10.1117/12.473480

16 July 2002 Optimum sampling for characterization of systematic variation in photolithography

Jason P. Cain, Haolin Zhang, Costas J. Spanos

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473480
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper, variability in the photolithography pattern transfer process is analyzed by means of a large number of CD measurements spread across the stepper field and across the wafer. The variability is found to be highly systematic in nature, and methods are developed to extract the parameters of this systematic variation. Knowledge of the structure of the systematic variance allows for the selection of an optimum sampling plan to best capture the variance in future measurements of wafers from the same process.

Citation Download Citation

Jason P. Cain, Haolin Zhang, and Costas J. Spanos "Optimum sampling for characterization of systematic variation in photolithography", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473480

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