Paper
16 July 2002 Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control
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Abstract
One goal of CD metrology is to monitor lithographic process control and how it relates to post-etch results. At present, in-fab process control for this purpose is achieved through top-done CD measurements. To acquire profile information requires destructive cross-section SEM measurements or time- consuming atomic force microscope (AFM) measurements. To find height and profile information about a resist or etched structure directly on a CD-SEM, new techniques using the combination of in-column beam tilt and stereo graphic imaging have been developed and implemented on the Applied Materials VeraSEM-3D.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin D. Bunday, Michael Bishop, Marylyn Hoy Bennett, John R. Swyers, and Zipora Haberman-Golan "Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473452
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Calibration

Semiconducting wafers

Etching

Critical dimension metrology

Cadmium

Error analysis

Line edge roughness

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