Shape measurement simulation for the silicon trench array by scattering properties and continuous wavelet analysis with interference spectroscopy

Hirokimi Shirasaki

doi:10.1117/12.473511

16 July 2002 Shape measurement simulation for the silicon trench array by scattering properties and continuous wavelet analysis with interference spectroscopy

Hirokimi Shirasaki

Author Affiliations +

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473511
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The scattering properties made by the irradiated two dimensional plane wave beams in the square trench are analyzed by the boundary element method (BEM) and the finite-difference time-domain (FDTD) method. We calculate the scattering patterns by using the wavelength dispersion because the silicon substrate is thought to be a dispersive and the dielectric has energy loss in the visible light range. Then, we investigate the scattering patterns by changing the depth and the width of the trench, the trench array number, and the polarization and the angles of incidence of the 2D beams. The patterns change well when the channel width is under the examined cutoff wavelength of light. Also, the radiation beam phases change well using the groove width from the range of 0.07 to 0.2 micron meters. Then, the trench depth was examined by the continuous wavelet analysis with the interference spectrum data. In the wavelet analysis, the horizontal axis (the x axis) shows the frequency and the vertical axis (the y axis) is converted into scales (1/times) and the signal strength is shown in the z axis. The vertical axis scales correspond to the reciprocal of time and it is possible to obtain the depth by multiplying time and light velocity continuously in the wavelet analysis. So the tapered trenches are analyzed using the wavelet analysis.

Citation Download Citation

Hirokimi Shirasaki "Shape measurement simulation for the silicon trench array by scattering properties and continuous wavelet analysis with interference spectroscopy", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473511

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KEYWORDS

Silicon

Wavelets

Scattering

Finite-difference time-domain method

Laser scattering

Light scattering

Dielectrics

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