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21 May 1984 Trilayer Resist Processing Using Spin-On Glass Intermediate Layers
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Of the many multilayer resist processes reported in recent years, the trilayer (RIE) resist process has emerged as the most versatile approach capable of defining high aspect ratio features in the micron to submicron regime using either optical, X-ray, or e-beam imaging. However, the relative complexity of the technique has impeded its widespread use in production. Implementation of trilayer resist pro-cessing would be greatly facilitated if spin-on glass (SOG) films were employed as the intermediate etch-mask (barrier) layer in place of the traditional sputtered or plasma deposited inorganic films. Allied Chemical's ACCUGLASS" 103 and ACCUGLASS" Ti-900 are SOG materials designed for use in trilayer resist processing. Cured films of 103 SOG are Si02-like while those from Ti-900 SOG are Ti02-like. In this paper, the properties of these SOG films and their use in trilayer processing are described. Results are presented for several trilayer resist processes carried out employing the SOG barrier layers and two new planarizing sublayer materials.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satish K. Gupta and Carver G. Audain "Trilayer Resist Processing Using Spin-On Glass Intermediate Layers", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984);

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