100 nm device fabrication using ArF resist

Sung-Koo Lee; Jae Chang Jung; Young-Sun Hwang; Kyu-Dong Park; Jin-Soo Kim; Keun-Kyu Kong; Ki-Soo Shin

doi:10.1117/12.474257

24 July 2002 100 nm device fabrication using ArF resist

Sung-Koo Lee, Jae Chang Jung, Young-Sun Hwang, Kyu-Dong Park, Jin-Soo Kim, Keun-Kyu Kong, Ki-Soo Shin

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474257
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

To accomplish minimizing feature size to sub 100nm, new light sources for photolithography are emerging, such as ArF((lambda) =193nm), F₂((lambda) =157nm), and EUV(extremely Ultraviolet, (lambda) =13nm). Among these lithography technologies, ArF lithography will be used for 100nm and sub 100nm lithography. Past few years, ArF resist development has been the key issue for the success of ArF lithography. Now the resist problems are solved clearly and it is time to start on logic and DRAM real device fabrication using ArF lithography. In this study we will show all the resist process for 100nm real DRAM using ArF resist. For critical layers with no etching problems (Striation, PR Deformation etc.), the acrylate type resist was used. While the other critical layers, such as oxide layers, the COMA type resist was adapted to avoid the etching problem. Furthermore, we have optimized resist process and etching conditions, along with additional E-beam curing was minimized (only 2~3 layer is required) for the real device production. In case of contact hole patterns, the 110nm contact hole could be obtained successfully without additional process sch as RFP(Resist Flow Process) or RELACS(Resolution Enhancement Lithography Assisted by Chemical Shrink), leading to a good patterning and etching performance applicable to even below 100nm node tech.

Citation Download Citation

Sung-Koo Lee, Jae Chang Jung, Young-Sun Hwang, Kyu-Dong Park, Jin-Soo Kim, Keun-Kyu Kong, and Ki-Soo Shin "100 nm device fabrication using ArF resist", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474257

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