Characterization and improvement of resist pattern collapse on ArF (193 nm) organic B.A.R.C.

Young-Sun Hwang; Jae Chang Jung; Kyu-Dong Park; Sung-Koo Lee; Jin-Soo Kim; Keun-Kyu Kong; Ki-Soo Shin; Shuji Ding; Zhong Xiang; Mark Neisser

doi:10.1117/12.474189

24 July 2002 Characterization and improvement of resist pattern collapse on ArF (193 nm) organic B.A.R.C.

Young-Sun Hwang, Jae Chang Jung, Kyu-Dong Park, Sung-Koo Lee, Jin-Soo Kim, Keun-Kyu Kong, Ki-Soo Shin, Shuji Ding, Zhong Xiang, Mark Neisser

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474189
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Due to miniaturization of semiconductor devices, ArF (193nm) lithography is likely expected to be used for sub 100nm regime. For sub 100nm devices, high NA (>=0.70) exposure tools and various strong off-axis illumination (OAI) conditions should be used. But unlike KrF (248nm) lithography, resist pattern collapse becomes one of the most serious problems in ArF lithography. In order to solve pattern collapse problem, thin resist process is generally introduced but its poor etch resistance is an obstacle for being applied in real production process. Due to this reason, new kinds of organic BARC materials are investigated and optimized to avoid pattern collapse. As mentioned, the most important issue in ArF organic BARC is believed to be the pattern collapse problem. A number of organic BARCs were made by varying polymer, cross-linker, thermal acid generator, and additive. We tried to analyze the key factor in terms of pattern collapse. This paper is to compare the various elements of the organic BARC formulation and to discuss what brings and causes pattern collapse.

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Young-Sun Hwang, Jae Chang Jung, Kyu-Dong Park, Sung-Koo Lee, Jin-Soo Kim, Keun-Kyu Kong, Ki-Soo Shin, Shuji Ding, Zhong Xiang, and Mark Neisser "Characterization and improvement of resist pattern collapse on ArF (193 nm) organic B.A.R.C.", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474189

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