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24 July 2002 Fluorocarbon-based single-layer resist for 157-nm lithography
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Abstract
We have designed and synthesized a number of unique polymer systems composed of acrylate and styrene even though it had moderate transparency. Our first model of 157nm photoresist was based on a (alpha) trifluoromethylacrylate and styrene bearing a pendent hexafluoroisopropanol with pentafluoroisopropyl t-butyl carbonate (PFITBC) as the transparent enhancer and acid labile compound. PFITBC was obtained from perfluorinated enolate with di-t-butyl carbonate with high yield. All of the absorbance of our system ranged over 3.0~3.4micrometers -1 for base resin, which corresponded to a resist thickness of 110~125 nm at the optical density of 0.4. We have formulated several resists based on these polymers and these formulations have shown high resolution and contrast at 248 nm. We were able to obtain 240nm 1:1 image when exposed at 248 nm by a Nikon stepper with 0.45NA. To overcome the weak etch resistance with thin thickness film, we investigated the vapor phase silylation treatment (SILYAL) in which the treated pattern was more persistent against the O2 plasma and turned to smoother surface. DMSMDA with Bi(DMA)MS of 30-40 wt% showed not only good control resist flow but also the improvement of line-edge roughness. Our results suggested that a facile approach to fluorine incorporated resin with SILYAL process can accelerate the 157nm lithography.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ki-Yong Song, Kwang-Sub Yoon, Sang-Jun Choi, Sang-Gyun Woo, Woo-Sung Han, Jae-Jun Lee, Sang-Kyun Lee, Chang-Ho Noh, and Kenji Honda "Fluorocarbon-based single-layer resist for 157-nm lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474248
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