Fullerene incorporation in DNQ Novolak photoresist for increasing plasma etch resistance

J. David Benson; Andrew J. Stoltz Jr.; Andrew W. Kaleczy; John H. Dinan

doi:10.1117/12.474200

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24 July 2002 Fullerene incorporation in DNQ Novolak photoresist for increasing plasma etch resistance

J. David Benson, Andrew J. Stoltz Jr., Andrew W. Kaleczy, John H. Dinan

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Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474200
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Incorporating fullerene into DNQ novolak resist provides a 60 percent reduction in the ECR plasma etch rate in a hydrogen/argon plasma. The reduction in plasma etch rate was also accompanied by a 5 degree(s)C increase in the pattern flow temperature. Plasma etch resistance was added to the photoresist after pattern exposure. Fullerene incorporation was accomplished by pattern development in a C₆₀ /tetra-methyl ammonium hydroxide (TMAH) solution.

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J. David Benson, Andrew J. Stoltz Jr., Andrew W. Kaleczy, and John H. Dinan "Fullerene incorporation in DNQ Novolak photoresist for increasing plasma etch resistance", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474200

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