Improvement of line edge roughness by employing new PAG

Yang-Sook Kim; Yun-Hyi Kim; Sang-Hyang Lee; Yun-Gill Yim; Deog-Bae Kim; Jae-Hyun Kim

doi:10.1117/12.474285

24 July 2002 Improvement of line edge roughness by employing new PAG

Yang-Sook Kim, Yun-Hyi Kim, Sang-Hyang Lee, Yun-Gill Yim, Deog-Bae Kim, Jae-Hyun Kim

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474285
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Novel organic PAGs have been prepared in order to improve line edge roughness (LER) of 248nm and 193nm resists. From careful design of PAG, transparent, highly diffusive PAG was successfully prepared. New PAGs have increased hydrophilicity in cationic portion of PAG(photoacid generator.).

Citation Download Citation

Yang-Sook Kim, Yun-Hyi Kim, Sang-Hyang Lee, Yun-Gill Yim, Deog-Bae Kim, and Jae-Hyun Kim "Improvement of line edge roughness by employing new PAG", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474285

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