Novel photoacid generators for chemically amplified resists

Hitoshi Yamato; Toshikage Asakura; Akira Matsumoto; Masaki Ohwa

doi:10.1117/12.474281

24 July 2002 Novel photoacid generators for chemically amplified resists

Hitoshi Yamato, Toshikage Asakura, Akira Matsumoto, Masaki Ohwa

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474281
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Recently we have developed new class of non-ionic oxime sulfonate PAG. The compounds generate various kinds of sulfonic acids, such as n-propane, n-octane, camphor and p-toluene sulfonic acid under Deep-UV exposure and are applicable for chemically amplified (CA) photoresists. The application-relevant properties of the compounds such as solubility in propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate, ethyl 3-ethoxypropionate, and 2-heptanone, UV absorption, thermal stability with or without poly(4-hydroxystyrene) (PHS), storage stability in a neat form or in PGMEA solution with or without additives, sensitivity in a model resist formulation, dissolution inhibition efficiency during the development process and volatility were evaluated. The compounds exhibit good solubility in PGMEA, high sensitivity in positive tone CA resist formulations, with Deep-UV exposure, and no significant volatility. Especially it was found that the compounds are superior in terms of thermal stability and storage stability, i.e., high thermal stability up to 188 degree(s)C in a phenolic matrix, and no change during storage in PGMEA at 60 degree(s)C for 5 months.

Citation Download Citation

Hitoshi Yamato, Toshikage Asakura, Akira Matsumoto, and Masaki Ohwa "Novel photoacid generators for chemically amplified resists", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474281

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