Paper
24 July 2002 Organoelement resists for EUV lithography
Author Affiliations +
Abstract
EUV lithography is perhaps the most promising of the NGL technologies for sub-100nm resolution. To address needs in this area, we have designed and synthesized several types of organoelement resists using only low absorbing elements, including H, C, Si and B. One category is based on silicon-containing block and random polymers. They show high transparency according to theoretical simulations and have high oxygen reactive ion etch resistances compared to Novolac resins. In a preliminary study, we were able to image these polymers to 180 nm line/space patterns using EUV exposure. A second type of EUV transparent resist platform involves boron-containing polymers. Carborane carboxylic acid was attached to a copolymer backbone to introduce boron atoms with controlled attachment level. It was found that incorporation of a small amount of B provides remarkably high oxygen etch resistance.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junyan Dai, Christopher Kemper Ober, Lin Wang, Franco Cerrina, and Paul F. Nealey "Organoelement resists for EUV lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474197
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Polymers

Silicon

Etching

Reactive ion etching

Extreme ultraviolet

Extreme ultraviolet lithography

Oxygen

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