Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Lei Yuan; Andrew R. Neureuther

doi:10.1117/12.474173

24 July 2002 Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Lei Yuan, Andrew R. Neureuther

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474173
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

A sequential double exposure technique for characterizing resist materials suggested by the authors is demonstrated experimentally at 248nm lithography. This technique is verified to improve two-dimension pattern and line end shortening. A new PEB parameter extraction method based on the double exposed technique is applied to UV210 and APEX-E and the first round results have been obtained. With the help of the new methodology, Fickean and non-Fickean diffusions are evaluated.

Citation Download Citation

Lei Yuan and Andrew R. Neureuther "Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474173

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