Paper
30 July 2002 Accuracy of new analytical models for resist formation lithography
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Abstract
The applicability and accuracy of newly developed analytical models for resist process effects are investigated. These models combine a stationary level set formulation with a lumped parameter model. They allow to propagate the 3D photoresist profile given the 3D aerial image distribution. The first model, based on the vertical propagation algorithm (VPM), takes into account the 2D intensity distribution inside the resist, including the absorption. The second model incorporates the scaled defocus algorithm (SCDF), which describes the 3D intensity of the resist, taking into account the defocus values. In this paper we investigate the applicability for any geometry, for process window determination and the accuracy by taking reference to the fully fledged simulator SOLID-C. The suggested methods allow to calculate 3D resist profile in a fast way thereby enabling the prediction of large areas.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juriy Malov, Christian K. Kalus, Henning Muellerke, Thomas Schmoeller, and Robert Wildfeuer "Accuracy of new analytical models for resist formation lithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474506
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
3D modeling

Absorption

Photoresist processing

3D image processing

Algorithm development

Lithography

Optical lithography

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