Accuracy of simulation based on the acid-quencher mutual diffusion model in KrF processes

Keiko T. Hattori; Jun Abe; Hiroshi Fukuda

doi:10.1117/12.474505

30 July 2002 Accuracy of simulation based on the acid-quencher mutual diffusion model in KrF processes

Keiko T. Hattori, Jun Abe, Hiroshi Fukuda

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474505
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The accuracy of the acid-quencher mutual diffusion model was examined for three commercial resists (acetal-type resists for use with KrF exposure), by comparing results for real wafer CDs with simulated results as obtained by using the model with best-fit parameters (diffusion length for acid/quencher, and relative concentration of quencher). Utilizing our model reduced the deviation between simulated and measured CDs for a wide range of patterns to 6 nm in terms of standard deviation and +/- 10 nm in terms of p-v range. Best-fit Parameters are in the following ranges; acid-diffusion length equals 7 - 13 nm, quencher-diffusion length equals 150 - 200 nm, and relative quencher concentration equals 0.16 - 0.175 (all for two-iteration calculation). The best-fit diffusion length dependence on number of iterations in diffusion/quenching calculation implied agreement with Fick's law and the dependence of the best-fit relative quencher concentration on exposure dose suggested the validity of this model. Quencher diffusion into an organic bottom anti-reflective coating (BARC) was also observed by carrying out a simple experiment.

Citation Download Citation

Keiko T. Hattori, Jun Abe, and Hiroshi Fukuda "Accuracy of simulation based on the acid-quencher mutual diffusion model in KrF processes", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474505

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