ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints

Yorick Trouiller; J. Serrand; Corinne Miramond; Yves Fabien Rody; Serdar Manakli; Pierre-Jerome Goirand

doi:10.1117/12.474539

30 July 2002 ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints

Yorick Trouiller, J. Serrand, Corinne Miramond, Yves Fabien Rody, Serdar Manakli, Pierre-Jerome Goirand

Author Affiliations +

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474539
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The insertion point for the first scattering bar is a key point in the development of a process using assist features, because this semi dense feature will determine the overall depth of focus of the process. A study of the parameters, which influence the choice of this insertion point, has been performed using a 0.63 NA 193 nm scanner for a 100 nm CD target after litho. The impact of the scattering bar on: Depth of Focus, Energy Latitude, Mask Error Enhancement Factor, printability, and the effect of scattering bar line width variation on main feature described by a parameter called AFMEEF will be discussed in this paper. The optimal insertion point for the first scattering bar will strongly depend on the litho-graphic process and the mask parameters. A model is proposed to determine the optimal insertion point, as function of the dose, focus budget, minimal allowed scatterbar width, and mask CD dispersion for both scattering bars and main features.

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Yorick Trouiller, J. Serrand, Corinne Miramond, Yves Fabien Rody, Serdar Manakli, and Pierre-Jerome Goirand "ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474539

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