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30 July 2002 Assist feature OPC implementation for the 130 nm technology node with KrF and no forbidden pitches
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Abstract
At the 130 nm technology node with KrF illumination the k1 factor is only approximately 0.35. At k1 equals 0.35 it becomes essential to apply some form of Resolution Enhancement Technology (RET). The addition of sub-resolution assist features is one route to achieving a manufacturable process window. One potential drawback to assist features has always been the so called 'forbidden pitch' issue. In this paper the authors will describe a method for achieving a manufacturable process window for all pitches including those within the 'forbidden pitch' zone. The authors will show through simulation how careful optimization of the illumination settings can result in a manufacturable process window for all pitches. Finally, experimental results will be given which confirm the through pitch performance of the final process.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James C. Word, Siuhua Zhu, and John L. Sturtevant "Assist feature OPC implementation for the 130 nm technology node with KrF and no forbidden pitches", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474494
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