Paper
30 July 2002 CD control with effective exposure dose monitor technique in photolithography
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Abstract
We have established the effective dose metrology using a dose monitor mark named the effective dose-meter that has no focus response. By arranging the effective dose-meter onto scribe line in a device reticle, the in-line monitor of effective dose on product has been realized. The effective dose-meter was designed to monitor effective dose as a resist line length whose dimension is detectable with an optical measurement tool. The design is considered not to impact on both reticle fabrication and wafer processing. By monitoring the effective dose-meter, the contribution of effective dose error to critical dimension variation could be obtained independently with focus error. Dose budget analysis from in-line effective dose monitor made clear the current process ability with respect to reticle linewidth variation and resist processing uniformity. This paper describes the mark design, and the analysis result of in- line effective dose monitor in device fabrication with KrF lithography.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masafumi Asano, Kyoko Izuha, Tadahito Fujisawa, and Soichi Inoue "CD control with effective exposure dose monitor technique in photolithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474577
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KEYWORDS
Critical dimension metrology

Semiconducting wafers

Reticles

Photoresist processing

Optical lithography

Control systems

Scanners

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