Limitation of optical lithography for various resolution enhancement technologies

Tae-Seung Eom; Chang-Nam Ahn; Dong-Heok Park; Cha-Won Koh; Cheol-Kyu Bok

doi:10.1117/12.474545

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30 July 2002 Limitation of optical lithography for various resolution enhancement technologies

Tae-Seung Eom, Chang-Nam Ahn, Dong-Heok Park, Cha-Won Koh, Cheol-Kyu Bok

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Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474545
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper, we will discuss the limitation of optical lithography with various resolution enhancement technologies. Lithography simulation was done by Hynix OPC Simulation Tool (HOST) based on Diffused Aerial Image Model (DAIM). The effects of numerical aperture (NA), wavelength, illumination conditions, mask and diffusion length of acid were simulated in view of resolution improvement. Diffusion length of acid is a dominant factor for resolution improvement for sub-100 nm era. As pattern size decreased, the limitation of optical lithography is more affected by diffusion length of acid. And other factors (NA, wavelength, illumination conditions and mask) will be discussed. Finally, ultimate the limitation of lithography will be discussed analytically.

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Tae-Seung Eom, Chang-Nam Ahn, Dong-Heok Park, Cha-Won Koh, and Cheol-Kyu Bok "Limitation of optical lithography for various resolution enhancement technologies", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474545

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