Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches

Keeho Kim; Yong-Seok Choi; Robert John Socha; Donis G. Flagello

doi:10.1117/12.474573

30 July 2002 Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches

Keeho Kim, Yong-Seok Choi, Robert John Socha, Donis G. Flagello

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474573
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The feasibility study to use high NA ArF lithography for 70 nm process development was done. After intensive simulation works, new forbidden-itch behavior of alternating PSM in low k1 imaging was found out. This forbidden pitch due to extremely small MEF and OPE of alternating PSM at small (sigma) . In order understand the mechanism and behavior of the forbidden-pitch, simulation and experiment were done as function of critical parameters of NA, (sigma) and wavelength. Solution to control forbidden-pitch for low k1 imaging of 70 nm has been address as critical item which needs to be overcome.

Citation Download Citation

Keeho Kim, Yong-Seok Choi, Robert John Socha, and Donis G. Flagello "Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474573

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