Production-ready 4-kHz ArF laser for 193-nm lithography

Choonghoon Oh; Vladimir B. Fleurov; Thomas Hofmann; Thomas P. Duffey; F. Trintchouk; Patrick O'Keeffe; Peter C. Newman; Gerry M. Blumenstock

doi:10.1117/12.474567

30 July 2002 Production-ready 4-kHz ArF laser for 193-nm lithography

Choonghoon Oh, Vladimir B. Fleurov, Thomas Hofmann, Thomas P. Duffey, F. Trintchouk, Patrick O'Keeffe, Peter C. Newman, Gerry M. Blumenstock

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Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474567
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Semiconductor chip manufacturing is on the verge of a new production process node driving critical feature sizes below 100 nm. The next generation of 193 nm Argon Fluoride laser, the NanoLith^TM 7000, has been developed in response to this recent technology development in the lithography industry. The NanoLith^TM 7000, offering 20 Watts average output power at 4 kHz repetition rate, is designed to support the highest exposure tool scan speeds for maximum productivity and wafer throughput. Technology improvements to support the move from pilot production to full production will be described. With core technology defined and performance to specification established, attention turns to cost of operation, which is closely tied to module lifetime and reliability. Here we present results of the NanoLith^TM 7000 system lifetest tracking all optical performance data over a 4.4 Billion shot. The system is operated in firing modes ranging from 1-4 kHz, and up to 75% duty cycle. Overall system performance measured to date both in the lab and in the field suggests that this laser meets all the production requirements for 193 nm lithography.

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Choonghoon Oh, Vladimir B. Fleurov, Thomas Hofmann, Thomas P. Duffey, F. Trintchouk, Patrick O'Keeffe, Peter C. Newman, and Gerry M. Blumenstock "Production-ready 4-kHz ArF laser for 193-nm lithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474567

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